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Grain Size Modulation and Interfacial Engineering of CH 3 NH 3 PbBr 3 Emitter Films through Incorporation of Tetraethylammonium Bromide
Author(s) -
Jamaludin Nur Fadilah,
Yantara Natalia,
Ng Yan Fong,
Li Mingjie,
Goh Teck Wee,
Thirumal Krishnamoorthy,
Sum Tze Chien,
Mathews Nripan,
Soci Cesare,
Mhaisalkar Subodh
Publication year - 2018
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201701380
Subject(s) - passivation , common emitter , materials science , halide , diode , tetraethylammonium , bromide , grain size , optoelectronics , chemical engineering , inorganic chemistry , nanotechnology , chemistry , composite material , metallurgy , layer (electronics) , potassium , engineering
Metal halide perovskites have demonstrated breakthrough performances as absorber and emitter materials for photovoltaic and display applications respectively. However, despite the low manufacturing cost associated with solution‐based processing, the propensity for defect formation with this technique has led to an increasing need for defect passivation. Here, we present an inexpensive and facile method to remedy surface defects through a postdeposition treatment process using branched alkylammonium cation species. The simultaneous realignment of interfacial energy levels upon incorporation of tetraethylammonium bromide onto the surface of CH 3 NH 3 PbBr 3 films contributes favorably toward the enhancement in overall light‐emitting diode characteristics, achieving maximum luminance, current efficiency, and external quantum efficiency values of 11 000 cd m −2 , 0.68 cd A −1 , and 0.16 %, respectively.