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Doping Phosphorene with Holes and Electrons through Molecular Charge Transfer
Author(s) -
Vishnoi Pratap,
Rajesh S.,
Manjunatha S.,
Bandyopadhyay Arkamita,
Barua Manaswee,
Pati Swapan K.,
Rao C. N. R.
Publication year - 2017
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201700789
Subject(s) - phosphorene , tetrathiafulvalene , acceptor , doping , electron , raman spectroscopy , tetracyanoethylene , chemical physics , electron acceptor , chemistry , raman scattering , molecule , electron transfer , electron donor , materials science , charge (physics) , molecular physics , photochemistry , band gap , condensed matter physics , physics , optoelectronics , optics , organic chemistry , quantum mechanics , catalysis
An important aspect of phosphorene, the novel two‐dimensional semiconductor, is whether holes and electrons can both be doped in this material. Some reports found that only electrons can be preferentially doped into phosphorene. There are some theoretical calculations showing charge‐transfer interaction with both tetrathiafulvalene (TTF) and tetracyanoethylene (TCNE). We have carried out an investigation of chemical doping of phosphorene by a variety of electron donor and acceptor molecules, employing both experiment and theory, Raman scattering being a crucial aspect of the study. We find that both electron acceptors and donors interact with phosphorene by charge‐transfer, with the acceptors having more marked effects. All the three Raman bands of phosphorene soften and exhibit band broadening on interaction with both donor and acceptor molecules. First‐principles calculations establish the occurrence of charge‐transfer between phosphorene with donors as well as acceptors. The absence of electron‐hole asymmetry is noteworthy.