Back Cover: First‐Principles Study on Doping of SnSe 2  Monolayers (ChemPhysChem 3/2016) | Zendy

Huang YuCheng | Zendy; Zhou Danmei | Zendy; Chen Xi | Zendy; Liu Hai | Zendy; Wang Chan | Zendy; Wang Sufan | Zendy

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Back Cover: First‐Principles Study on Doping of SnSe 2 Monolayers (ChemPhysChem 3/2016)

Author(s) -

Huang YuCheng,

Zhou Danmei,

Chen Xi,

Liu Hai,

Wang Chan,

Wang Sufan

Publication year - 2016

Publication title -

chemphyschem

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.016

H-Index - 140

eISSN - 1439-7641

pISSN - 1439-4235

DOI - 10.1002/cphc.201600061

Subject(s) - monolayer , doping , conductivity , cover (algebra) , chemistry , materials science , electrical resistivity and conductivity , condensed matter physics , chemical physics , computational chemistry , nanotechnology , optoelectronics , physics , quantum mechanics , mechanical engineering , engineering

By using DFT calculations , the electrical properties of a SnSe2 monolayer with p‐type and n‐type doping in addition to isoelectronic doping are investigated. A SnSe2 monolayer with p‐type conductivity cannot be obtained, whereas n‐type conductivity in this monolayer can be achieved by Br doping. Isoelectronic doping does not change the intrinsic semiconducting features of the SnSe2 monolayer. More information can be found in the Full Paper by Y. Huang et al. on page 375 in Issue 3, 2016 (DOI: 10.1002/cphc.201501034).

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