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Inside Cover: Spontaneous Formation of Microgroove Arrays on the Surface of p‐Type Porous Silicon Induced by a Turing Instability in Electrochemical Dissolution (ChemPhysChem 8/2015)
Author(s) -
Fukami Kazuhiro,
Urata Tomoko,
Krischer Katharina,
Nishi Naoya,
Sakka Tetsuo,
Kitada Atsushi,
Murase Kuniaki
Publication year - 2015
Publication title -
chemphyschem
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201590041
Subject(s) - dissolution , porous silicon , electrochemistry , instability , silicon , turing , pattern formation , cover (algebra) , surface (topology) , materials science , porosity , type (biology) , nanotechnology , chemical engineering , chemical physics , chemistry , electrode , optoelectronics , physics , computer science , composite material , mathematics , geometry , engineering , mechanics , biology , genetics , mechanical engineering , ecology , programming language
The Turing pattern is as a spatial pattern that is spontaneously formed through self‐organization. On p. 1613, K. Fukami et al. show that a microscopic Turing‐type pattern is formed on the surface of p‐type porous silicon during electrochemical dissolution.