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Inside Cover: Anticorrelation between Surface and Subsurface Point Defects and the Impact on the Redox Chemistry of TiO 2 (110) (ChemPhysChem 2/2015)
Author(s) -
Yoon Yeohoon,
Du Yingge,
Garcia Juan C.,
Zhu Zihua,
Wang ZhiTao,
Petrik Nikolay G.,
Kimmel Gregory A.,
Dohnalek Zdenek,
Henderson Michael A.,
Rousseau Roger,
Deskins N. Aaron,
Lyubinetsky Igor
Publication year - 2015
Publication title -
chemphyschem
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201590007
Subject(s) - scanning tunneling microscope , cover (algebra) , rutile , crystallographic defect , chemistry , chemical physics , redox , surface (topology) , nanotechnology , crystallography , materials science , inorganic chemistry , geometry , mechanical engineering , mathematics , organic chemistry , engineering
On p. 313 R. Rousseau, N. A. Deskins, I. Lyubinetsky et al. describe the spatial anticorrelation between surface and subsurface defects on rutile TiO 2 (110), explored using scanning tunneling microscopy and DFT. The cover picture shows that surface O vacancies ( V O ) are markedly inhibited in the vicinity of positively charged subsurface point defects, whereas the entire nearest subsurface region has no charged point defects.