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Spontaneous Formation of Microgroove Arrays on the Surface of p‐Type Porous Silicon Induced by a Turing Instability in Electrochemical Dissolution
Author(s) -
Fukami Kazuhiro,
Urata Tomoko,
Krischer Katharina,
Nishi Naoya,
Sakka Tetsuo,
Kitada Atsushi,
Murase Kuniaki
Publication year - 2015
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201500037
Subject(s) - instability , silicon , miniaturization , nanotechnology , dissolution , micropatterning , pattern formation , porous silicon , turing , materials science , micrometer , electrode , surface (topology) , chemical physics , optoelectronics , chemistry , physics , computer science , optics , mechanics , mathematics , biology , genetics , programming language , geometry
Abstract Self‐organization plays an imperative role in recent materials science. Highly tunable, periodic structures based on dynamic self‐organization at micrometer scales have proven difficult to design, but are desired for the further development of micropatterning. In the present study, we report a microgroove array that spontaneously forms on a p‐type silicon surface during its electrodissolution. Our detailed experimental results suggest that the instability can be classified as Turing instability. The characteristic scale of the Turing‐type pattern is small compared to self‐organized patterns caused by the Turing instabilities reported so far. The mechanism for the miniaturization of self‐organized patterns is strongly related to the semiconducting property of silicon electrodes as well as the dynamics of their surface chemistry.