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The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low‐Pressure Chemical Vapor Deposition
Author(s) -
Kim Dae Woo,
Kim Seon Joon,
Kim Jae Sung,
Shin Minju,
Kim GyuTae,
Jung HeeTae
Publication year - 2015
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201402633
Subject(s) - graphene , chemical vapor deposition , foil method , materials science , crystallite , graphene nanoribbons , deposition (geology) , graphene oxide paper , nanotechnology , chemical engineering , chemical physics , chemistry , composite material , metallurgy , paleontology , sediment , engineering , biology
Abstract The influence of various Cu lattices on the texturing of graphene domains during low‐pressure chemical vapor deposition was investigated in a large area. The results show that the sizes and shapes of graphene domains grown on Cu(111) substrates match well with those of the underlying Cu(111) domains, which seem to be quasi‐single‐crystalline. In contrast, on other Cu substrates such as (100) and more intermediate domains, graphene islands with poly‐domains (ca. 85 %) are significantly nucleated, eventually merging into polycrystalline graphene. Within the overall channel‐length range, graphene from a Cu foil shows a higher resistance compared to graphene from a Cu(111) domain, with the extracted average channel resistances being 34.51 Ω μm −1 for Cu(111) and 66.17 Ω μm −1 for the Cu foil.