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Effect of Electrical Contact on the Performance of Bi 2 S 3 Single Nanowire Photodetectors
Author(s) -
Li Renxiong,
Yang Juehan,
Huo Nengjie,
Fan Chao,
Lu Fangyuan,
Yan Tengfei,
Wei Zhongming,
Li Jingbo
Publication year - 2014
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201402201
Subject(s) - ohmic contact , photocurrent , materials science , nanowire , photodetector , optoelectronics , electrode , laser , contact resistance , photoconductivity , nanotechnology , layer (electronics) , optics , chemistry , physics
Bi 2 S 3 single‐crystalline nanowires are synthesized through a hydrothermal method and then fabricated into single nanowire photodetectors. Due to the different contact barrier between the gold electrode and Bi 2 S 3 nanowires, two kinds of devices with different electrical contacts are obtained and their photoresponsive properties are investigated. The non‐ohmic contact devices show larger photocurrent gains and shorter response times than those of ohmic contact devices. Furthermore, the influence of a focused laser on the barrier height between gold and Bi 2 S 3 is explored in both kinds of devices and shows that laser illumination on the AuBi 2 S 3 interface can greatly affect the barrier height in non‐ohmic contact devices, while keeping it intact in ohmic contact devices. A model based on the surface photovoltage effect is used to explain this phenomenon.