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A Pedagogical Perspective on Ambipolar FETs
Author(s) -
Kang Moon Sung,
Frisbie C. Daniel
Publication year - 2013
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201300014
Subject(s) - ambipolar diffusion , transistor , field effect transistor , voltage , optoelectronics , diagram , materials science , charge carrier , threshold voltage , electron , chemistry , electrical engineering , physics , computer science , engineering , quantum mechanics , database
The operation of an ambipolar field‐effect transistor (FET) is described using a simple diagram depicting the gate voltage and channel potential profile relative to the injection threshold voltage of charge carriers. From this diagram, the transition between transistor‐operation regimes and the resulting current–voltage relations can be easily understood. Also, a practical guidance for the operation of an ambipolar FET is provided. In particular, conditions to achieve the true ambipolar regime, which is of particular interest for light‐emitting transistor operation, and a correct method to extract electron and hole mobilities from a given current–voltage curve are presented.