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The Origin of Higher Open‐Circuit Voltage in Zn‐Doped TiO 2 Nanoparticle‐Based Dye‐Sensitized Solar Cells
Author(s) -
Zhu Feng,
Zhang Panpan,
Wu Xuejun,
Fu Limin,
Zhang Jianping,
Xu Dongsheng
Publication year - 2012
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201200362
Subject(s) - dye sensitized solar cell , anatase , photocurrent , open circuit voltage , materials science , doping , nanoparticle , band gap , solar cell , electrochemistry , optoelectronics , fermi level , nanotechnology , chemical engineering , voltage , analytical chemistry (journal) , photocatalysis , chemistry , electron , electrode , electrolyte , physics , biochemistry , quantum mechanics , chromatography , catalysis , engineering
Zn‐doped anatase TiO 2 nanoparticles are synthesized by a one‐step hydrothermal method. Detailed electrochemical measurements are undertaken to investigate the origin of the effect of Zn doping on the performance of dye‐sensitized solar cells (DSSCs). It is found that incorporation of Zn 2+ into an anatase lattice elevates the edge of the conduction band (CB) of the photoanodes and the Fermi level is shifted toward the CB edge, which contributes to the improvement in open‐circuit voltage ( V OC ). Charge‐density plots across the cell voltage further confirm the increase in the CB edge in DSSCs directly. Photocurrent and transient photovoltage measurements are employed to study transport and recombination dynamics. The electron recombination is accelerated at higher voltages close to the CB edge, thus leading to a negative effect on the V OC .