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Silicon‐Based Ion‐Sensitive Field‐Effect Transistor Shows Negligible Dependence on Salt Concentration at Constant pH
Author(s) -
Knopfmacher Oren,
Tarasov Alexey,
Wipf Mathias,
Fu Wangyang,
Calame Michel,
Schönenberger Christian
Publication year - 2012
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201100918
Subject(s) - electrolyte , field effect transistor , ionic strength , transistor , silicon , salt (chemistry) , ion , ionic bonding , analytical chemistry (journal) , chemistry , oxide , materials science , inorganic chemistry , optoelectronics , electrode , chromatography , aqueous solution , electrical engineering , voltage , engineering , organic chemistry
I(o)n‐sensitive transistors: The response of (miniaturized) ion‐sensitive field‐effect transistors (ISFETs) with oxide interfaces to changes in the electrolyte concentration is discussed. It is shown that FETs covered with a thin alumina layer are almost insensitive to changes in the ionic strength of the electrolyte, while being extremely pH‐sensitive.