Premium
A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors
Author(s) -
Ting HengWen,
Chen SzuYing,
Huang TinChun,
Wei JengHua,
Yew TriRung
Publication year - 2011
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.201000241
Subject(s) - diimide , perylene , pentacene , thin film transistor , materials science , organic semiconductor , spin coating , thin film , transistor , semiconductor , optoelectronics , electrode , chemical engineering , nanotechnology , organic chemistry , chemistry , layer (electronics) , molecule , voltage , physics , quantum mechanics , engineering
For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO 2 (LPD–SiO 2 ) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.