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STM and DFT Investigations of Isolated Porphyrin on a Silicon‐Based Semiconductor at Room Temperature
Author(s) -
El Garah Mohamed,
Makoudi Younes,
Palmino Frank,
Duverger Eric,
Sonnet Philippe,
Chaput Laurent,
Gourdon Andre,
Cherioux Frederic
Publication year - 2009
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200900523
Subject(s) - porphyrin , silicon , substrate (aquarium) , adsorption , semiconductor , surface (topology) , molecule , chemistry , nanotechnology , materials science , optoelectronics , photochemistry , organic chemistry , oceanography , geometry , mathematics , geology
Model compound: Individual adsorbed Cu‐5,10,15,20‐tetrakis(3,5‐di‐ tert ‐butylphenyl) porphyrins are observed by STM on a Si(111)‐B surface with an atomic resolution at room temperature (see figure). The conformational modifications after the adsorption on the surface is successfully interpreted with DFT calculations performed on the entire system (molecule and substrate).