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Sensitized Emission from Lanthanide‐Doped Nanoparticles Embedded in a Semiconductor Sol–Gel Thin Film
Author(s) -
Sivakumar Sri,
van Veggel Frank C. J. M.,
Raudsepp Mati
Publication year - 2007
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200700283
Subject(s) - lanthanide , nanoparticle , doping , thin film , materials science , sol gel , ion , semiconductor , excitation , analytical chemistry (journal) , absorption spectroscopy , luminescence , absorption (acoustics) , energy transfer , chemistry , nanotechnology , optoelectronics , organic chemistry , optics , composite material , molecular physics , physics , engineering , electrical engineering
In 2 O 3 sol–gel thin films made with LaF 3 :Ln 3+ (Ln=Er, Nd, and Eu) nanoparticles were prepared and showed sensitized emission of the lanthanide ions after In 2 O 3 matrix excitation. The excitation spectra showed an In 2 O 3 absorption band in addition to the excitation peaks of the lanthanide ions, clearly demonstrating that there is energy transfer from the In 2 O 3 matrix to Ln 3+ (Er 3+ , Nd 3+ , and Eu 3+ ). Similarly, HfO 2 and ZrO 2 sol–gel thin films made with LaF 3 :Ln 3+ nanoparticles also showed energy transfer from the semiconductor matrix to the lanthanide ions.