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Time‐Resolved Synchrotron Radiation Excited Optical Luminescence: Light‐Emission Properties of Silicon‐Based Nanostructures
Author(s) -
Sham TsunKong,
Rosenberg Richard A.
Publication year - 2007
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200700226
Subject(s) - luminescence , materials science , optoelectronics , synchrotron radiation , excited state , synchrotron , silicon , light emission , synchrotron light source , absorption (acoustics) , porous silicon , optics , atomic physics , physics , storage ring , beam (structure) , composite material
The recent advances in the study of light emission from matter induced by synchrotron radiation: X‐ray excited optical luminescence (XEOL) in the energy domain and time‐resolved X‐ray excited optical luminescence (TRXEOL) are described. The development of these element (absorption edge) selective, synchrotron X‐ray photons in, optical photons out techniques with time gating coincide with advances in third‐generation, insertion device based, synchrotron light sources. Electron bunches circulating in a storage ring emit very bright, widely energy tunable, short light pulses (<100 ps), which are used as the excitation source for investigation of light‐emitting materials. Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si–CdSe heterostructures) is used to illustrate the applicability of these techniques and their great potential in future applications.