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Sol–Gel Template Synthesis and Photoluminescence of n‐ and p‐Type Semiconductor Oxide Nanowires
Author(s) -
Cao Huaqiang,
Qiu Xianqing,
Liang Yu,
Zhang Lei,
Zhao Meijuan,
Zhu Qiming
Publication year - 2006
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200500452
Subject(s) - nanowire , photoluminescence , non blocking i/o , materials science , scanning electron microscope , semiconductor , transmission electron microscopy , nanotechnology , oxide , analytical chemistry (journal) , optoelectronics , chemistry , catalysis , composite material , metallurgy , biochemistry , chromatography
10.1002/cphc.200500452.abs A sol–gel template technique has been put forward to synthesize single‐crystalline semiconductor oxide nanowires, such as n‐type SnO 2 and p‐type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single‐crystal with average diameters in the range of 100–300 nm and lengths of over 10 μm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n‐type semiconductor SnO 2 , and a PL emission at 407 nm for p‐type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet‐light emission at room temperature is attributed to near‐band‐edge emission for SnO 2 nanowires and the 3d 7 4s→3d 8 transition of Ni 2+ for NiO nanowires.