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Using Scanning Electrochemical Microscopy to Determine the Doping Level and the Flatband Potential of Boron‐Doped Diamond Electrodes
Author(s) -
ChaneTune Jérôme,
Petit JeanPierre,
Szunerits Sabine,
Bouvier Pierre,
Delabouglise Didier,
Marcus Bernadette,
Mermoux Michel
Publication year - 2006
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200500391
Subject(s) - diamond , doping , electrode , materials science , electrochemistry , scanning probe microscopy , boron , analytical chemistry (journal) , microscopy , scanning electrochemical microscopy , scanning electron microscope , scanning tunneling microscope , nanotechnology , chemistry , optoelectronics , optics , metallurgy , composite material , physics , organic chemistry , chromatography
A new approach for determining the doping level ( N A ) and the flatband potential ( ${{{\rm E}{{{\rm {\rm FB}}\hfill \atop {\rm {\rm F}}\hfill}}}}$ ) of electrochemically activated boron‐doped diamond electrodes is presented. Scanning electrochemical microscopy is used to monitor an electrode's approach to a diamond surface (see figure): The obtained approach curves are then used to determine N A (8.3 × 10 19 B cm −3 ) and ${{{\rm E}{{{\rm {\rm FB}}\hfill \atop {\rm {\rm F}}\hfill}}}}$ (0.654 V vs. Ag/AgCl).