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Alkyl Monolayer Passivated Metal–Semiconductor Diodes: 2: Comparison with Native Silicon Oxide
Author(s) -
Liu YongJun,
Yu HuaZhong
Publication year - 2003
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200390059
Subject(s) - silicon , monolayer , materials science , passivation , optoelectronics , strained silicon , ohmic contact , semiconductor , diode , analytical chemistry (journal) , nanotechnology , chemistry , crystalline silicon , amorphous silicon , layer (electronics) , chromatography
To understand the electrical properties at passivated metal–semiconductor interfaces, two types of mercury–insulator–silicon (n‐type) junctions, Hg|C 10 H 21 Si and Hg|SiO 2 Si, were fabricated and their current–voltage and capacitance–voltage characteristics compared. Both of them exhibited near‐ideal rectifying characteristics with an excellent saturation current at reverse bias, which is in contrast to the previously reported ohmic behavior of an unmodified mercury–silicon junction. The experimental results also indicated that the n ‐decyl monolayer passivated junction possesses a higher effective barrier height, a lower ideality factor (that is, closer to unity), and better reproducibility than that of native silicon oxide. In addition, the dopant density and build‐in potential, extracted from capacitance–voltage measurements of these passivated mercury–silicon junctions, revealed that alkyl monolayer derivatization does not alter the intrinsic properties of the silicon substrate. The calculated surface state density at the alkyl monolayer|silicon interface is lower than that of the silicon oxide|silicon interface. The present study increases the possibility of using advanced organic materials as ultrathin insulator layers for miniaturized, silicon‐based microelectronic devices.