Premium
Epitaxial Growth of Pentacene Films on Metal Surfaces
Author(s) -
Lukas Simon,
Söhnchen Sandra,
Witte Gregor,
Wöll Christof
Publication year - 2004
Publication title -
chemphyschem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.016
H-Index - 140
eISSN - 1439-7641
pISSN - 1439-4235
DOI - 10.1002/cphc.200300892
Subject(s) - pentacene , molecular beam epitaxy , monolayer , epitaxy , fabrication , materials science , substrate (aquarium) , thin film , deposition (geology) , optoelectronics , nanotechnology , metal , field effect transistor , thin film transistor , transistor , layer (electronics) , metallurgy , medicine , paleontology , oceanography , alternative medicine , pathology , sediment , geology , biology , physics , voltage , quantum mechanics
The right temperature for growth: High quality, epitaxial pentacene thin films were grown on Cu(110) by applying a two‐step growth procedure, which involves the formation (using organic molecular beam epitaxy) of a complete monolayer at elevated temperatures followed by multilayer deposition at reduced temperatures. The organic films prepared (see picture) using this approach have their molecular axes orientated perpendicular to the substrate surface and are promising for the fabrication of lateral field effect transistors (FETs).