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Enhanced Photo‐Response of Mos 2 Photodetectors by a Laterally Aligned SiO 2 Nanoribbon Array Substrate
Author(s) -
Lim Namsoo,
Pak Yusin,
Kim JaeKeun,
Yoo Tae Jin,
Kim Hyeonghun,
Kumaresan Yogeenth,
Kim Woochul,
Cho Seongjun,
Kwon Sooncheol,
Hun Lee Byoung,
Lee Takhee,
Jung GunYoung
Publication year - 2019
Publication title -
chemnanomat
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.947
H-Index - 32
ISSN - 2199-692X
DOI - 10.1002/cnma.201900404
Subject(s) - dark current , photocurrent , materials science , photodetector , optoelectronics , substrate (aquarium) , molybdenum disulfide , doping , monolayer , electrode , layer (electronics) , silicon , semiconductor , nanotechnology , chemistry , oceanography , geology , metallurgy
Achieving both high photocurrent and small dark current is required for the enhanced performance of molybdenum disulfide (MoS 2 ) photodetector (PD). In the two‐dimensional transition metal dichalcogenide PD, inevitable recombinations occur highly at intrinsic defects of MoS 2 and impede photo‐generated carrier releasement into electrodes, resulting in a poor PD performance. To address this issue without introducing a superiorly high‐crystalline MoS 2 monolayer and/or complex PD architecture, we for the first time report a facile method of simply transferring the MoS 2 onto a periodically aligned silicon dioxide nanoribbons (SNR) array substrate fabricated by 325 nm laser interference lithography. Interestingly, two different n ‐doping states are arranged alternately on the MoS 2 layer, depending on the underlying region of contact substrate (pristine SiO 2 and SNR). The different n ‐doping levels induce internal electric fields by which photo‐generated carriers are separated, reducing the recombination chance. The MoS 2 PD on the SNR array substrate shows an improved photocurrent to dark current ratio of ∼360 (∼7 times larger than that of the reference PD on the pristine SiO 2 substrate), while producing a small dark current of ∼10 −12 A at V G =0 V. Our method paves the way for enhancing the performance of other 2D materials‐based optoelectronic devices.