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Front Cover: Synthesis and Characterization of Zirconium Disulfide Single Crystals and Thin‐Film Transistors Based on Multilayer Zirconium Disulfide Flakes (ChemNanoMat 10/2018)
Author(s) -
Shimazu Yoshihiro,
Fujisawa Yutaro,
Arai Kensuke,
Iwabuchi Tatsuya,
Suzuki Kazuya
Publication year - 2018
Publication title -
chemnanomat
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.947
H-Index - 32
ISSN - 2199-692X
DOI - 10.1002/cnma.201800426
Subject(s) - molybdenum disulfide , zirconium , materials science , characterization (materials science) , disulfide bond , transistor , thin film transistor , nanotechnology , transition metal , field effect transistor , metal , chemical engineering , layer (electronics) , metallurgy , chemistry , organic chemistry , catalysis , electrical engineering , biochemistry , engineering , voltage
Semiconducting two‐dimensional materials such as transition metal dichalcogenides have attracted considerable attention because they can be used as ultrathin materials for various applications including flexible electronic devices. Single crystals of zirconium disulfide (ZrS 2 ) are synthesized by a chemical vapor transport method. Field‐effect transistors using exfoliated multilayer ZrS 2 flakes exhibit n‐channel characteristics with an on/off ratio of approximately 200. More information can be found in the Full Paper by Yoshihiro Shimazu et al. on page 1078 in Issue 10, 2018 (DOI: 10.1002/cnma.201800304).