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Electrical and Photoresponse Properties of Inversion Asymmetric Topological Insulator BiTeCl Nanoplates
Author(s) -
Liu Yujing,
Yin Jianbo,
Tan Zhenjun,
Wang Mingzhan,
Wu Jinxiong,
Liu Zhongfan,
Peng Hailin
Publication year - 2017
Publication title -
chemnanomat
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.947
H-Index - 32
ISSN - 2199-692X
DOI - 10.1002/cnma.201700041
Subject(s) - topological insulator , gapless playback , point reflection , materials science , optoelectronics , surface states , electric field , planar , topology (electrical circuits) , transistor , condensed matter physics , physics , voltage , surface (topology) , electrical engineering , computer science , quantum mechanics , geometry , mathematics , computer graphics (images) , engineering
Topological insulators (TIs) are new quantum materials with bulk energy gaps and unique helical gapless surface states protected by time‐reversal symmetry, providing a platform for the exploration of novel quantum phenomena and emerging applications. Bismuth tellurochloride (BiTeCl), the first strong inversion asymmetric topological insulator, has attracted considerable attention because of its exotic crystal structure and electrical band structure. Herein, we report the crystalline‐surface‐dependent n‐type and p‐type field effect transistors based on two‐dimensional (2D) BiTeCl nanoplates. The p‐type 2D BiTeCl exhibited a relatively strong photosensitivity with small dark current. Photovoltage generation in the vertical conducting channel of 2D BiTeCl is enhanced by 2–3 times in comparison with that in the planar conducting channel, presumably due to the enhanced separation efficiency of photogenerated electron–hole pairs induced by the existing built‐in electric field in polarized BiTeCl nanoplates. Our studies may encourage devoted efforts towards intrinsic topological p‐n junctions and high‐performance electrical and optoelectronic devices.