Premium
Back Cover: Resistive Switching Nanodevices Based on Metal–Organic Frameworks (ChemNanoMat 1/2016)
Author(s) -
Wang Zhengbang,
Nminibapiel David,
Shrestha Pragya,
Liu Jianxi,
Guo Wei,
Weidler Peter G.,
Baumgart Helmut,
Wöll Christof,
Redel Engelbert
Publication year - 2016
Publication title -
chemnanomat
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.947
H-Index - 32
ISSN - 2199-692X
DOI - 10.1002/cnma.201500225
Subject(s) - materials science , resistive random access memory , nanotechnology , microelectronics , optoelectronics , electrical conductor , cover (algebra) , flexibility (engineering) , thin film , electrode , scalability , resistive touchscreen , electrical engineering , computer science , composite material , mechanical engineering , engineering , chemistry , statistics , mathematics , database
Bipolar switching was demonstrated in crystalline and monolithic SURMOF (surface‐anchored metal–organic framework) thin films shown on the Back Cover. By using conductive substrates as bottom and top electrodes, these metal‐organic‐hybrid materials act as novel nonvolatile RRAM memory devices. The huge flexibility of the SURMOF‐RRAM device was further enhanced by loading ferrocene into the free pores of the framework. This result demonstrates a huge potential of SURMOF thin films as scalable active materials for the next‐generation of digital processing and organic‐based microelectronic devices. More information can be found in the Full Paper by H. Baumgart, C. Wöll, E. Redel, et al. on page 67 in Issue 1, 2016 (DOI: 10.1002/cnma.201500143).