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Graphene Nanoribbons from Tetraphenylethene‐Based Polymeric Precursor: Chemical Synthesis and Application in Thin‐Film Field‐Effect Transistor
Author(s) -
Ma Ji,
Zhu Haoyun,
Huang Wei,
Lin Tingting,
Pan Xiaoyong,
Wang Weizhi
Publication year - 2015
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.201500672
Subject(s) - chemistry , photoluminescence , graphene nanoribbons , raman spectroscopy , band gap , nanotechnology , polymer , thin film , field effect transistor , polymerization , fourier transform infrared spectroscopy , graphene , transistor , optoelectronics , chemical engineering , materials science , organic chemistry , voltage , physics , engineering , quantum mechanics , optics
Graphene nanoribbons (GNRs) with a non‐zero bandgap are regarded as a promising candidate for the fabrication of electronic devices. In this study, large‐scale solution synthesis of narrow GNRs was firstly achieved by the intramolecular cyclodehydrogenation of kinked tetraphenylethene (TPE) polymer precursors prepared by A 2 B 2 ‐type Suzuki‐Miyaura polymerization. After the cyclization reaction, the nanoribbons have a better conjugation than the twisted polymer precursor, resulting in obvious red shift in UV/vis absorption and photoluminescence (PL) spectra. The efficient formation of conjugated nanoribbons was also investigated by Raman, FTIR spectroscopy, and microscopic studies. Furthermore, such structurally well‐defined GNRs have been successfully developed for top‐gated field‐effect transistor (FET) by directly solution processing. The AFM images show that the prepared‐GNRs thin films form crystalline fibrillar intercalating networks, which can effectively facilitate the charge transport. These FET devices with ion‐gel gate dielectrics exhibit low‐voltage operation (<5 V) with excellent mobility up to 0.41 cm 2 ·V −1 ·s −1 and an on‐off ratio of 3×10 4 , thus opening up new opportunities for flexible GNRs‐based electronic devices.