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Label‐Free DNA Sensors Based on Field‐Effect Transistors with Semiconductor of Carbon Materials
Author(s) -
Zhao Lu,
Cao Dapeng,
Gao Zhiqiang,
Mi Baoxiu,
Huang Wei
Publication year - 2015
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.201500254
Subject(s) - miniaturization , field effect transistor , nanotechnology , transistor , sensitivity (control systems) , semiconductor , chemistry , signal (programming language) , optoelectronics , electronic engineering , materials science , electrical engineering , computer science , engineering , voltage , programming language
Over one decade, various DNA sensors of carbon material‐based field‐effect transistors (FETs) have been intensively developed into an inspiring area of research and technology to substitute for the traditional method, for instance, fluorescence labeling detection. These FET DNA sensors have advantages of: directly read‐out electrical signal, no need to label DNA molecule with fluorescer, high sensitivity, facility of miniaturization, simple device preparation process, high signal‐to‐noise ratio (SNR) and wide detection range. This review gives a comprehensive description on the state‐of‐the‐art carbon‐based FET DNA sensors from the aspect of both semiconductor material and structure of device. Several essential points in this research field, including sensitivity, selectivity, stability and challenges are addressed. Optimization of sensing performance and application of these devices are also discussed.