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New Core‐Expanded Naphthalene Diimides for n‐Channel Organic Thin Film Transistors
Author(s) -
Hu Yunbin,
Wang Zhongli,
Zhang Xu,
Yang Xiaodi,
Li Hongxiang,
Gao Xike
Publication year - 2013
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.201300585
Subject(s) - chemistry , naphthalene , thin film transistor , thin film , electron mobility , transistor , sulfur , core (optical fiber) , nanotechnology , optoelectronics , chemical engineering , photochemistry , organic chemistry , layer (electronics) , composite material , materials science , electrical engineering , engineering , voltage
Four classes of core‐expanded naphthalene diimides ( 1a , 1b , 2a , 2b , 3 and 4 ) that bear different electron‐deficient sulfur heterocycles were designed and synthesized. The solution‐processed thin films of 1a , 2a , 3 and 4 operated well in air as n‐channel organic transistors with electron mobility ranging from ∼10 −6 to 0.14 cm 2 /Vs, depending on the different conjugated backbones. The thin film microstructure studies were also carried out to understand the variations of the electron mobility for thin films of 1a , 2a , 3 and 4 .
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