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Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air
Author(s) -
YongFa Zhu,
PeiYu Yan,
Tao Yi,
LiLi Cao,
LongTu Li
Publication year - 2000
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.20000180311
Subject(s) - x ray photoelectron spectroscopy , annealing (glass) , silicon , auger electron spectroscopy , chemistry , analytical chemistry (journal) , activation energy , substrate (aquarium) , oxygen , layer (electronics) , electron spectroscopy , chemical reaction , chemical engineering , materials science , composite material , organic chemistry , geology , physics , oceanography , nuclear physics , engineering
The interface diffusion and chemical reaction between a PZT (PbZr x Ti 1‐x O 3 ) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X‐Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiC x , TiSi x species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT/Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO 2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO 2 , interlayer was proportional to the square root of treatment time. The formation of the SiO 2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing temperature, and governed by the diffusion of oxygen in SiO 2 interlayer at high annealing temperature. The apparent activation energy of the interface oxidation reaction was about 39.1 kJ/mol.