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Photoelectrochemical behavior, XPS and Auger of n‐In 2 S 3
Author(s) -
Gong SunQuan,
Tan Zheng
Publication year - 1992
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.19920100206
Subject(s) - chemistry , auger , x ray photoelectron spectroscopy , polysulfide , quantum efficiency , redox , irradiation , photoelectrochemistry , auger effect , analytical chemistry (journal) , atomic physics , inorganic chemistry , electrochemistry , chemical engineering , electrode , optoelectronics , electrolyte , environmental chemistry , nuclear physics , engineering , physics
n‐In 2 S 3 has been prepared by CVT method. The photoelectrochemical behavior of n‐In 2 S 3 in a polysulfide redox solution was investigated. It was found that photoetching remarkably increased the fill factor. The maximum quantum efficiency of carrier collection reached 95% after 12h irradiation at 100 mW/cm 2 at an applied potential of + 1.2 V. XPS and Auger analysis were carried out for examining surface and bulk concentration. The photoetching effect could be satisfactorily explained.

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