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AC impedance study on semiconducting properties of anodic plumbous oxide film
Author(s) -
Cong Pu,
ZhuoLi He,
HouTian Liu,
XiaLin Chen,
WeiFang Zhou
Publication year - 1990
Publication title -
chinese journal of chemistry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.28
H-Index - 41
eISSN - 1614-7065
pISSN - 1001-604X
DOI - 10.1002/cjoc.19900080504
Subject(s) - chemistry , semiconductor , oxide , electrical impedance , anode , analytical chemistry (journal) , phase (matter) , electrode , optoelectronics , materials science , organic chemistry , electrical engineering , engineering , chromatography
The semiconducting properties of anodic film formed on Pb in 4.5mol·dm −3 H 2 SO 4 solution (30°C) at 0.9 V (vs. Hg/Hg 2 SO 4 ) for 2 h were studied using AC impedance method. The phase composition of the film is PbSO 4 and PbO·PbSO 4 . The semiconducting properties are due to the latter. The Mott‐Schottky plots show that the said film is an n ‐type semiconductor with flat‐band potential of −0.9 V (vs. Hg/Hg 2 SO 4 ) and donor density of 1×10 16 cm −3 . The surface density measured at 410–2500 Hz is (2–5)×10 12 cm −2 eV −1 .
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