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Natural convection in liquid encapsulated czochralski growth of gallium arsenide
Author(s) -
Sabhapathy P.,
Salcudean M. E.
Publication year - 1990
Publication title -
the canadian journal of chemical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.404
H-Index - 67
eISSN - 1939-019X
pISSN - 0008-4034
DOI - 10.1002/cjce.5450680209
Subject(s) - crucible (geodemography) , micro pulling down , materials science , crystal growth , convection , crystal (programming language) , gallium , radius , gallium arsenide , melt flow index , natural convection , composite material , mineralogy , crystallography , mechanics , metallurgy , geology , chemistry , optoelectronics , physics , computational chemistry , computer science , programming language , computer security , copolymer , polymer
The natural convection in the melt during LEC growth of GaAs is studied numerically for a crucible radius of 0.1 m, melt heights 0.025 m and 0.05 m, and crystal radii 0.025 m and 0.05 m. When only the crucible side wall is heated, the flow is unicellular moving up the side wall, along the melt‐encapsulant interface, downward beneath the crystal, and along the bottom toward the side wall. With heating at the top of the crucible, the side wall temperature can be lowered without freezing the melt near the melt‐encapsulant interface. The flow is often multi‐cellular when the bottom of the crucible is heated. An optimum heating at the top and bottom of the crucible can flatten the isotherms near the crystal‐melt interface and improve the diameter control.