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Transport effects in the manufacture of reaction‐bonded silicon nitride
Author(s) -
Hughes G. S.,
Mcgreavy C.,
Merkin J. H.
Publication year - 1979
Publication title -
the canadian journal of chemical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.404
H-Index - 67
eISSN - 1939-019X
pISSN - 0008-4034
DOI - 10.1002/cjce.5450570211
Subject(s) - exothermic reaction , biot number , thiele modulus , silicon nitride , mass transfer , silicon , materials science , boundary value problem , thermodynamics , mechanics , chemical reaction , transient (computer programming) , mathematics , mathematical analysis , chemistry , physics , computer science , metallurgy , biochemistry , operating system
The transient behaviour of the exothermic, irreversible, silicon‐nitrogen reaction is analysed, using mixed type boundary conditions to represent external resistances. The mathematical model incorporates a sharp cut‐off reaction into the moving reaction zone, in the heat mass transfer field, and the resulting system of equations is solved numerically using an explicit finite difference scheme. Effects of varying the Thiele modulus, Prater temperature and Biot number are examined, together with the different geometrical effects. The results are graphically presented and interpreted.