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A mathematical model for cooperative diffusion
Author(s) -
Balcezak W. K.,
Stapper C. H.,
Veno W. E.,
Withers D. H.
Publication year - 1973
Publication title -
the canadian journal of chemical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.404
H-Index - 67
eISSN - 1939-019X
pISSN - 0008-4034
DOI - 10.1002/cjce.5450510308
Subject(s) - diffusion , common emitter , boron , statistical physics , base (topology) , diffusion equation , silicon , phosphorus , mathematical model , thermodynamics , materials science , chemistry , mathematics , physics , mathematical analysis , engineering , optoelectronics , statistics , metric (unit) , organic chemistry , operations management , metallurgy
This model is a mathematical description of the interactive, or cooperative diffusions of boron and phosphorus in silicon. The cooperative diffusions are explained in terms of enhanced diffusion coefficients which are concentration dependent. By using these coefficients, the coupled non‐linear diffusion equations are replaced by two non‐linear uncoupled diffusion equations. The model explains the so‐called emitter push effect found in phosphorus emitter/boron base devices. Results show excellent agreement with experimental profiles.