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The effect of thin gap insertion layer on InP nanostructure grown by metal–organic vapour phase epitaxys
Author(s) -
Han Soe Soe,
Panyakeow Somsak,
Ratanathammaphan Somchai,
Higo Akio,
Yunpeng Wang,
Deura Momoko,
Sugiyama Masakasu,
Nakano Yoshiaki
Publication year - 2012
Publication title -
the canadian journal of chemical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.404
H-Index - 67
eISSN - 1939-019X
pISSN - 0008-4034
DOI - 10.1002/cjce.21648
Subject(s) - materials science , full width at half maximum , band gap , quantum dot , nucleation , substrate (aquarium) , layer (electronics) , optoelectronics , metalorganic vapour phase epitaxy , phase (matter) , thin film , chemical vapor deposition , epitaxy , wavelength , nanotechnology , chemistry , oceanography , organic chemistry , geology
The effect of thin GaP insertion layers on the structural and optical properties of InP/In 0.49 Ga 0.51 P self‐assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metal–organic vapour phase epitaxy has been reported. The properties of InP/In 0.49 Ga 0.51 P SAQDs are modified when a thin (1–4 ML) GaP layer is inserted underneath the InP quantum dots (QDs). Deposition of the GaP insertion layer affects the dot dimension and improves the size uniformity. The density, dimension and uniformity of InP QDs strongly depend on the GaP insertion layer thickness. This variation in QD size is a result of a material nucleation effect caused by atomic intermixing between the InP QDs and underlying GaP insertion layer and surface energy. The insertion of GaP layer led to tuning the emission wavelength and narrowing of full width at half maximum (FWHM) when they are characterised by PL measurements at room temperature. © 2012 Canadian Society for Chemical Engineering