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Prozeßmodellierung bei der metallorganischen Gasphasenepitaxie
Author(s) -
Dauelsberg Martin,
Durst Franz,
Kadinski Lew,
Makarov Yuri N.
Publication year - 1997
Publication title -
chemie ingenieur technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.365
H-Index - 36
eISSN - 1522-2640
pISSN - 0009-286X
DOI - 10.1002/cite.330690705
Subject(s) - metalorganic vapour phase epitaxy , mass transfer , diffusion , semiconductor , heat transfer , materials science , epitaxy , homogeneous , chemistry , optoelectronics , mechanics , thermodynamics , nanotechnology , physics , chromatography , layer (electronics)
This article provides a brief survey of mathematical modelling of metalorganic vapour phase epitaxy (MOVPE), a step in semiconductor processing of III‐V compound semiconductors serving as basis for the production of electronic and optoelectronic components. The process model for MOVPE is based on the mathematical description of gas flow for a MOVPE reactor coupled with heat transfer and mass transport, including multicomponent diffusion, thermal diffusion, and homogeneous and heterogeneous chemical reactions. Several approaches to the description of multicomponent mass transport, of the modelling of heat transfer in terms of thermal radiation, and of the actual growth process on the growing semiconductor surface are considered. The process modell is applied to MOVPE of GaAs in an industrial multilayer reactor and the calculated results validated with the aid of experimental results.