Premium
Großtechnische Herstellung von Reinstsilicium
Author(s) -
Silbernagel Heinz
Publication year - 1978
Publication title -
chemie ingenieur technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.365
H-Index - 36
eISSN - 1522-2640
pISSN - 0009-286X
DOI - 10.1002/cite.330500807
Subject(s) - trichlorosilane , silicon , monocrystalline silicon , materials science , crucible (geodemography) , lapping , metallurgy , polishing , semiconductor , wafer , polycrystalline silicon , optoelectronics , nanotechnology , chemistry , computational chemistry , layer (electronics) , thin film transistor
Abstract Large scale production of hyperpure silicon . Silicon still remains one of the most important elements in use in semiconductor technology. Worldwide production of silicon amounts to more than 1000 t/year. Its use in semiconductor components calls for special requirements, such as extreme purity in the ppb‐range, absolutely perfect crystals, and narrow dimensional tolerances and special surface properties of fabricated silicon slices. Reaction of 95% pure metallurgical grade silicon and hydrochloric acid results in trichlorosilane, which is then purified by distillation. This is subsequently subjected to a reductive cracking process in order to produce hyperpure polycrystalline silicon. Monocrystalline silicon rods are then manufactured by one of two crystal growing methods, either by crucible pulling (Czochralski) or by float zoning. The single crystals thus obtained are then sliced by diamond cutting machines. Depending on their final use the slices are then processed by lapping, polishing, epitaxy, etc.