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Chemistry Platform for the Ultrafast Continuous Synthesis of High‐Quality III–V Quantum Dots
Author(s) -
Giroire Baptiste,
Garcia Alain,
Marre Samuel,
Cardinal Thierry,
Aymonier Cyril
Publication year - 2021
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.202101802
Subject(s) - photoluminescence , quantum dot , ternary operation , indium , nitride , chemistry , band gap , nanotechnology , chemical engineering , materials science , optoelectronics , computer science , layer (electronics) , programming language , engineering
A chemistry platform for the fast continuous synthesis of III–V quantum dots is demonstrated. III‐nitride QDs are prepared by using short residence times (less than 30 s) in a one‐step continuous process with supercritical solvents. GaN QDs prepared via this route exhibit strong UV photoluminescence with a structuring of the emission signal at low temperature (5 K), confirming their high quality. An example of metal site substitution is given with the synthesis of In x Ga 1‐x N solid solution. A continuous bandgap shift towards lower energies is demonstrated when increasing the indium content with strong photoluminescence signals from UV to visible. The chemistry platform proposed could be easily extrapolated to binary and ternary III phosphides or arsenides with the homologous V source.