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Effect of a “Zn Bridge” on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials
Author(s) -
Guo Jiacong,
Zhang Yankun,
Tian Guofeng,
Ji Deyang,
Qi Shengli,
Wu Dezhen
Publication year - 2021
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.202101496
Subject(s) - materials science , polyimide , electron transfer , acceptor , charge (physics) , nanotechnology , chemical engineering , chemistry , photochemistry , physics , condensed matter physics , layer (electronics) , quantum mechanics , engineering
Abstract Polyimide memory materials with a donor–acceptor structure based on a charge‐transfer mechanism exhibit great potential for next‐generation information storage technology due to their outstanding high‐temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI−Zn x ( x =5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge‐transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI−Zn x with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides.