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Heptacene: Synthesis and Its Hole‐Transfer Property in Stable Thin Films
Author(s) -
Miyazaki Takaaki,
Watanabe Motonori,
Matsushima Toshinori,
Chien ChingTing,
Adachi Chihaya,
Sun ShihSheng,
Furuta Hiroyuki,
Chow Tahsin J.
Publication year - 2021
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.202100936
Subject(s) - materials science , substrate (aquarium) , organic field effect transistor , thermal stability , yield (engineering) , transistor , thin film , vacuum deposition , deposition (geology) , thin film transistor , field effect transistor , chemical engineering , optoelectronics , nanotechnology , chemistry , organic chemistry , layer (electronics) , composite material , paleontology , engineering , biology , geology , physics , quantum mechanics , oceanography , voltage , sediment
Heptacene ( 1 ) has been produced via a monoketone precursor, 2 , which was prepared from 1,2,4,5‐tetrabromobenzene in nine steps in a total yield of 10 %. Compound 2 was converted to 1 quantitatively by heating at 202 °C. Heptacene exhibited high thermal stability in the solid state without any observable change over two months. To investigate the potential value of 1 as a material for p‐type organic field‐effect transistors (OFETs), top‐contact OFET devices were fabricated by vacuum deposition of 1 onto a hexamethyldisilazane (HMDS)/SiO 2 /Si substrate. The best hole mobility performance was 2.2 cm 2 V −1 s −1 . This is the first report of stable heptacene being used in an effective device and examined for its charge carrier properties.
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