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Front Cover: Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin‐Film Transistor and Sensor Behavior of ZnO Films and Rods (Chem. Eur. J. 17/2021)
Author(s) -
Hoffmann Rudolf C.,
Sanctis Shawn,
Liedke Maciej O.,
Butterling Maik,
Wagner Andreas,
Njel Christian,
Schneider Jörg J.
Publication year - 2021
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.202005364
Subject(s) - zinc , microstructure , positron annihilation spectroscopy , materials science , thin film transistor , thin film , oxide , conductivity , positron annihilation , analytical chemistry (journal) , nanotechnology , chemistry , positron , metallurgy , layer (electronics) , electron , physics , nuclear physics , chromatography
Detection of combined defect cluster sites in zinc oxide : Oxidation of plasma sputtered zinc generates zinc oxide films in which Doppler broadening positron annihilation spectroscopy (PAS) and positron annihilation life‐time studies (PALS) make it possible to detect oxygen vacancies (Vo) that are in close proximity to zinc vacancies (VZn). They form defect cluster sites acting as shallow acceptors reducing the overall electron conductivity. PAS and PALS is able to correlate semiconducting behavior and microstructure in ZnO thin film transistors. More information can be found in the Full Paper by J. J. Schneider et al. on page 5422.