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Flexible Metal Oxide Semiconductor Devices Made by Solution Methods
Author(s) -
Jo JeongWan,
Kang SeungHan,
Heo Jae Sang,
Kim YongHoon,
Park Sung Kyu
Publication year - 2020
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.202000090
Subject(s) - electronics , semiconductor , electronic circuit , scalability , transistor , integrated circuit , semiconductor device , materials science , nanotechnology , semiconductor device fabrication , computer science , electronic engineering , electrical engineering , optoelectronics , engineering , voltage , layer (electronics) , database , wafer
For the fabrication of next‐generation flexible metal oxide devices, solution‐based methods are considered as a promising approach because of their potential advantages, such as high‐throughput, large‐area scalability, low‐cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low‐temperature, solution‐processed, flexible, metal oxide semiconductor devices, from a single thin‐film transistor device to fully integrated circuits and systems. The main challenges of solution‐processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy‐harvesting devices for self‐powered systems that integrate displays, sensors, data‐storage units, and information processing functions.