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Epitaxial Cubic Silicon Carbide Photocathodes for Visible‐Light‐Driven Water Splitting
Author(s) -
Han Xiuxiu,
Heuser Steffen,
Tong Xili,
Yang Nianjun,
Guo XiangYun,
Jiang Xin
Publication year - 2020
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201905218
Subject(s) - materials science , microcrystalline , epitaxy , water splitting , optoelectronics , silicon carbide , photoelectrochemical cell , nanocrystalline material , semiconductor , silicon , carbide , band gap , visible spectrum , hydrogen production , wide bandgap semiconductor , hydrogen , photocatalysis , nanotechnology , metallurgy , crystallography , catalysis , chemistry , electrolyte , electrode , biochemistry , layer (electronics) , organic chemistry
Cubic silicon carbide (3C‐SiC) material feature a suitable bandgap and high resistance to photocorrosion. Thus, it has been emerged as a promising semiconductor for hydrogen evolution. Here, the relationship between the photoelectrochemical properties and the microstructures of different SiC materials is demonstrated. For visible‐light‐derived water splitting to hydrogen production, nanocrystalline, microcrystalline and epitaxial (001) 3C‐SiC films are applied as the photocathodes. The epitaxial 3C‐SiC film presents the highest photoelectrochemical activity for hydrogen evolution, because of its perfect (001) orientation, high phase purity, low resistance, and negative conduction band energy level. This finding offers a strategy to design SiC‐based photocathodes with superior photoelectrochemical performances.