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Sulfur‐Containing Bent N‐Heteroacenes
Author(s) -
Ding Fangwei,
Xia Debin,
Sun Weipeng,
Chen Wei,
Yang Yulin,
Lin Kaifeng,
Zhang Feibao,
Guo Xugang
Publication year - 2019
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201902984
Subject(s) - sulfur , bent molecular geometry , thio , chemistry , chalcogen , valence (chemistry) , cyclic voltammetry , crystallography , delocalized electron , materials science , electrochemistry , stereochemistry , organic chemistry , electrode
Abstract A series of novel sulfur‐containing bent N‐heteroacenes were constructed and characterized by NMR and UV/Vis spectroscopy, cyclic voltammetry, and single‐crystal X‐ray diffraction. By introducing sulfur‐containing groups (thio, sulfinyl, and sulfonyl) into bent azaacenes, their electronic delocalization was improved and frontier energy levels were modulated. The target products displayed tunable optical and electronic properties through altering the valence of sulfur and fused length of the azaacenes. For the first time, typical products were utilized as organic field effect transistor materials, affording promising results.