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Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films
Author(s) -
Řičica Tomáš,
Světlík Tomáš,
Dostál Libor,
Růžička Aleš,
Růžička Květoslav,
Beneš Ludvík,
Němec Petr,
Bouška Marek,
Jambor Roman
Publication year - 2016
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201604190
Subject(s) - gallium , amorphous solid , chemistry , chelation , deposition (geology) , thin film , crystallography , materials science , inorganic chemistry , nanotechnology , organic chemistry , paleontology , sediment , biology
Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L 1 Ga(μ‐S)] 3 ( 1 ) and [L 2 Ga(μ‐S)] 2 ( 2 ) containing either N,C,N‐ or C,N‐chelating ligands L 1 or L 2 (L 1 is {2,6‐(Me 2 NCH 2 ) 2 C 6 H 3 } − and L 2 is {2‐(Et 2 NCH 2 )‐4,6‐ t Bu 2 ‐C 6 H 2 } − ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L 1 Ga(κ 2 ‐S 4 ) ( 3 ) was prepared and the unprecedented complex [{2‐[CH{(CH 2 ) 3 CH 3 }(μ‐OH)]‐6‐CH 2 NMe 2 }C 6 H 3 ]GaS ( 4 ) was also isolated as the minor by‐product of the reaction. Compounds 1 – 3 were further studied as potential single‐source precursors for amorphous GaS thin film deposition by spin‐coating.