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Few‐Layer Nanosheets of n‐Type SnSe 2
Author(s) -
Saha Sujoy,
Banik Ananya,
Biswas Kanishka
Publication year - 2016
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201604161
Subject(s) - materials science , thermoelectric effect , thermal conductivity , thermoelectric materials , phonon scattering , band gap , atmospheric temperature range , tin , doping , figure of merit , nanotechnology , optoelectronics , composite material , metallurgy , physics , meteorology , thermodynamics
Layered p‐block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created sensation in thermoelectrics due to its ultralow thermal conductivity and high thermoelectric figure of merit. Tin diselenide (SnSe 2 ), an additional layered compound belonging to the Sn‐Se phase diagram, possesses a CdI 2 ‐type structure. However, synthesis of pure‐phase bulk SnSe 2 by a conventional solid‐state route is still remains challenging. A simple solution‐based low‐temperature synthesis is presented of ultrathin (3–5 nm) few layers (4–6 layers) nanosheets of Cl‐doped SnSe 2 , which possess n‐type carrier concentration of 2×10 18 cm −3 with carrier mobility of about 30 cm 2 V −1 s −1 at room temperature. SnSe 2 has a band gap of about 1.6 eV and semiconducting electronic transport in the 300–630 K range. An ultralow thermal conductivity of about 0.67 Wm −1 K −1 was achieved at room temperature in a hot‐pressed dense pellet of Cl‐doped SnSe 2 nanosheets due to the anisotropic layered structure, which gives rise to effective phonon scattering.