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Frontispiece: GaN and Ga x In 1− x N Nanoparticles with Tunable Indium Content: Synthesis and Characterization
Author(s) -
Lei WeiWei,
Willinger Marc Georg,
Antonietti Markus,
Giordano Cristina
Publication year - 2015
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201585262
Subject(s) - indium , materials science , characterization (materials science) , nanoparticle , band gap , indium nitride , optoelectronics , nitride , wide bandgap semiconductor , content (measure theory) , nanotechnology , crystallography , chemistry , layer (electronics) , mathematical analysis , mathematics
Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Ga x In 1− x N nanoparticles were prepared by a bottom‐up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.