Premium
Investigation into the Sensing Process of High‐Performance H 2 S Sensors Based on Polymer Transistors
Author(s) -
Lv Aifeng,
Wang Ming,
Wang Yandong,
Bo Zhishan,
Chi Lifeng
Publication year - 2016
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201504196
Subject(s) - materials science , transistor , sensitivity (control systems) , active layer , desorption , optoelectronics , layer (electronics) , polymer , absorption (acoustics) , thinning , field effect transistor , response time , thin film transistor , nanotechnology , electronic engineering , computer science , chemistry , adsorption , composite material , electrical engineering , engineering , organic chemistry , ecology , computer graphics (images) , biology , voltage
Herein a H 2 S sensor based on a polymer field‐effect transistor is reported and the sensor shows high sensitivity, excellent selectivity, fast response, and good operational stability. A concentration as low as 1 ppb H 2 S is detectable, which is to date the most sensitive H 2 S sensor based on organic semiconducting film. Thinning the thickness of active layer does not necessarily improve the sensitivity, but rather leads to the reduction of performance if the thickness is too low. Further analysis proposes a mechanism that the changing rate of absorption and desorption of H 2 S molecules is different when the thickness of active layer varies, indicating the necessity for thickness optimization.