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Photochemically Engineering the Metal–Semiconductor Interface for Room‐Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
Author(s) -
Li XinHao,
Cai YiYu,
Gong LingHong,
Fu Wei,
Wang KaiXue,
Bao HongLiang,
Wei Xiao,
Chen JieSheng
Publication year - 2014
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201404325
Subject(s) - formic acid , nitrobenzene , aniline , catalysis , solvent , transfer hydrogenation , yield (engineering) , metal , materials science , semiconductor , photochemistry , chemistry , chemical engineering , inorganic chemistry , organic chemistry , optoelectronics , composite material , ruthenium , engineering
A mild photochemical approach was applied to construct highly coupled metal–semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high‐pressure gases or sacrificial additives.