Premium
Photochemically Engineering the Metal–Semiconductor Interface for Room‐Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
Author(s) -
Li XinHao,
Cai YiYu,
Gong LingHong,
Fu Wei,
Wang KaiXue,
Bao HongLiang,
Wei Xiao,
Chen JieSheng
Publication year - 2014
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201404325
Subject(s) - formic acid , nitrobenzene , aniline , catalysis , solvent , transfer hydrogenation , yield (engineering) , metal , materials science , semiconductor , photochemistry , chemistry , chemical engineering , inorganic chemistry , organic chemistry , optoelectronics , composite material , ruthenium , engineering
A mild photochemical approach was applied to construct highly coupled metal–semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high‐pressure gases or sacrificial additives.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom