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Preferential Formation of SiOC over SiC Linkage upon Thermal Grafting on Hydrogen‐Terminated Silicon (111)
Author(s) -
Khung Yit Lung,
Ngalim Siti Hawa,
Meda Laura,
Narducci Dario
Publication year - 2014
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201403014
Subject(s) - x ray photoelectron spectroscopy , alkyne , silicon , hydrogen , contact angle , materials science , oxygen , chemistry , crystallography , photochemistry , catalysis , chemical engineering , organic chemistry , engineering , composite material
In a stringent and near oxygen‐free environment, SiH surfaces were introduced to a trifluoroalkyne, an alcohol‐derivatized alkyne, as well as an equal mixture of both alkynes at a temperature of 130 °C. Contact angle measurements, high‐resolution X‐ray photoelectron spectroscopy (XPS), and angle‐resolved XPS were performed to examine the system. SiH surfaces were found to have a strong preference towards the formation of SiOC rather than SiC bonds when the alcohol and alkyne reactivities were compared.