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Analysis of Dopant Atom Distribution and Quantification of Oxygen Vacancies on Individual Gd‐Doped CeO 2 Nanocrystals
Author(s) -
Stroppa Daniel G.,
Dalmaschio Cleocir J.,
Houben Lothar,
Barthel Juri,
Montoro Luciano A.,
Leite Edson R.,
Ramirez Antonio J.
Publication year - 2014
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201400412
Subject(s) - dopant , doping , nanocrystal , materials science , analytical chemistry (journal) , atom (system on chip) , nanoparticle , ion , oxygen , nanotechnology , chemistry , optoelectronics , organic chemistry , chromatography , computer science , embedded system
This work reports the analysis of the distribution of Gd atoms and the quantification of O vacancies applied to individual CeO 2 and Gd‐doped CeO 2 nanocrystals by electron energy‐loss spectroscopy. The concentration of O vacancies measured on the undoped system (6.3±2.6 %) matches the expected value given the typical Ce 3+ content previously reported for CeO 2 nanoparticles. The doped nanoparticles have an uneven distribution of dopant atoms and an atypical amount of O vacant sites (37.7±4.1 %). The measured decrease of the O content induced by Gd doping cannot be explained solely by the charge balance including Ce 3+ and Gd 3+ ions.