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Concurrent Phosphorus Doping and Reduction of Graphene Oxide
Author(s) -
Poh Hwee Ling,
Sofer Zdeněk,
Nováček Michal,
Pumera Martin
Publication year - 2014
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201304217
Subject(s) - graphene , materials science , dopant , oxide , doping , graphene oxide paper , graphite , nanotechnology , graphene nanoribbons , electrochemistry , graphite oxide , optoelectronics , chemistry , composite material , electrode , metallurgy
Doped graphene materials are of huge importance because doping with electron‐donating or electron‐withdrawing groups can significantly change the electronic structure and impact the electronic and electrochemical properties of these materials. It is highly important to be able to produce these materials in large quantities for practical applications. The only method capable of large‐scale production is the oxidative treatment of graphite to graphene oxide, followed by its consequent reduction. We describe a scalable method for a one‐step doping of graphene with phosphorus, with a simultaneous reduction of graphene oxide. Such a method is able to introduce significant amount of dopant (3.65 at. %). Phosphorus‐doped graphene is characterized in detail and shows important electronic and electrochemical properties. The electrical conductivity of phosphorus‐doped graphene is much higher than that of undoped graphene, owing to a large concentration of free carriers. Such a graphene material is expected to find useful applications in electronic, energy storage, and sensing devices.